APTGLQ75H120T3G APTGLQ75H120T3G C rev 0 november, 2012 www.microsemi.com 1-6 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per igbt) these devices are se nsitive to electrostatic discharge. prope r handling procedures should be follo wed. see application note apt0502 on www.microsemi.com 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v i c continuous collector current t c = 25c 130 a t c = 80c 75 i cm pulsed collector current t c = 25c 250 v ge gate C emitter voltage 20 v p d maximum power dissipation 385 w rbsoa reverse bias safe operating area t j = 150c 150a @ 1100v application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? high speed trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive tc of vcesat ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full bridge high speed trench + field stop igbt4 power module v ces = 1200v i c = 75a @ tc = 80c downloaded from: http:///
APTGLQ75H120T3G APTGLQ75H120T3G C rev 0 november, 2012 www.microsemi.com 2-6 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 50 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 25c 1.7 2.05 2.4 v t j = 150c 2.6 v ge ( th ) gate threshold voltage v ge = v ce , i c = 2.6 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 150 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 4400 pf c oes output capacitance 250 c res reverse transfer capacitance 235 q g gate charge v ge = 15v, i c = 75a v ce = 960v 325 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 600v i c = 75a r g = 7 30 ns t r rise time 57 t d(off) turn-off delay time 290 t f fall time 16 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 600v i c = 75a r g = 7 30 ns t r rise time 49 t d(off) turn-off delay time 366 t f fall time 48 e on turn on energy v ge = 15v v bus = 600v i c = 75a r g = 7 t j = 25c 5.5 mj t j = 150c 6.4 e off turn off energy t j = 25c 2.05 t j = 150c 3.84 i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 260 a r thjc junction to case thermal resistance 0.39 c/w diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v 150 a i f dc forward current tc = 80c 60 a v f diode forward voltage i f = 60a 2.6 3.1 v i f = 120a 3.2 i f = 60a t j = 125c 1.8 t rr reverse recovery time i f = 60a v r = 800v di/dt =400a/s t j = 25c 300 ns t j = 125c 380 q rr reverse recovery charge t j = 25c 720 nc t j = 125c 3400 r thjc junction to case thermal resistance 0.65 c/w downloaded from: http:///
APTGLQ75H120T3G APTGLQ75H120T3G C rev 0 november, 2012 www.microsemi.com 3-6 temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g sp1 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGLQ75H120T3G APTGLQ75H120T3G C rev 0 november, 2012 www.microsemi.com 4-6 typical performance curve t j =25c t j =150c 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4 i c ( a ) v ce (v) output characteristics (v ge =15v) v ge =9v v ge =13v v ge =15v v ge =20v 0 25 50 75 100 125 150 0123456 i c ( a ) v ce (v) output characteristics t j = 150 \ c t j =25c t j =150c 0 25 50 75 100 125 150 56789101112 i c ( a ) v ge (v) transfert characteristics eon eoff 0 3 6 9 12 15 18 21 0 25 50 75 100 125 150 e ( m j ) i c (a) energy losses vs collector current v ce = 600v v ge = 15v r g = 7o t j = 150 \ c eon eoff 2 4 6 8 10 3 6 9 1 21 51 8 e ( m j ) gate resistance (ohms) v ce = 600v v ge =15v i c = 75a t j = 150 \ c switching energy losses vs gate resistance 0 25 50 75 100 125 150 175 0 300 600 900 1200 i c ( a ) v ce (v) reverse bias safe operating area v ge =15v t j =1 50 \ c r g =7o d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.1 0.2 0.3 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 t h e r m a l i m p e d a n c e ( c / w ) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pu lse duration igbt downloaded from: http:///
APTGLQ75H120T3G APTGLQ75H120T3G C rev 0 november, 2012 www.microsemi.com 5-6 hard switching zcs zvs 0 30 60 90 120 150 02 04 06 08 0 f m a x , o p e r a t i n g f r e q u e n c y ( k h z ) i c (a) v ce =600v d=50% r g =7 o t j =1 50 \ c t c =75 \ c operating frequency vs collector current t j =25c t j =125c 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i f ( a ) v f (v) forward characteristic of diode d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 t h e r m a l i m p e d a n c e ( c / w ) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse duration diode downloaded from: http:///
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